6^th International Workshop on Crystal Growth Technology

Chair(s): Bernhard Freudenberg (SolarWorld Innovations, Germany), Maria Porrini (SunEdison, Italy)
Invited speakers:

• Steven Kimbel (MEMC Electronic Materials, USA)
  Development of a 450 mm Semiconductor Silicon Crystal Process

• Wilfried von Ammon (Von Ammon Consulting, Germany)
  FZ and CZ Silicon Crystal Growth: Cost Driving Factors and New Perspectives

• Koichi Kakimoto (Kyushu University, Japan)
  Understanding and Control of Silicon Crystal Growth for LSIs and PVs

• Etienne Pihan (CEA-INES, France)
  Status and industrial future of DW wafered mono-like silicon crystals grown by directional solidification for high efficiency solar cells

• Xingming Huang (JA Solar, China)
  Development of High-quality Multi-crystalline Silicon Ingots

Poster:

• Michael Gonik (University of Freiburg, Germany)
  Segregation control in crystal growth of SiGe alloys from a thin melt layer

• Ellen Hedegaard (Aarhus University, Denmark)
  Functionally Graded Thermoelectrics by Bulk Crystal Growth

• Roland Kunert (Fraunhofer CSP, Germany)
  Silicon Float-Zone Crystals from low-cost Feed-Material

• Chung-Wen Lan (National Taiwan University)
  Grain Structures of Multi-crystalline Silicon Grown By Using Patterned Crucibles

• Zaoyang Li (Xi‘an Jiaotong University, China)
  Evaluation of seed crystal reuse for cast quasi-single crystalline silicon ingots

• Satoshi Nakano (Kyushu University, Japan)
  Effect of top and side heaters during two growth process on oxygen concentration, dislocation density and residual stress in a multicrystalline silicon for solar cells

• Xiaofang Qi (Xi‘an Jiaotong University, China)
  Modeling of three-dimensional heaters in numerical simulation of an industrial directional solidification furnace

• Kirils Surovovs (University of Latvia)
  Modelling of dopant transport during floating zone growth of silicon

• Amina Tandjaoui (CNRS-SIMAP, EPM, France)
  Grain Structure of Multi-Crystalline Silicon: X-ray Synchrotron Imaging Characterisation

• Yutao Tao (University of Minnesota, USA)
  Modeling of Particle Engulfment during the Growth of Multicrystalline Silicon for Solar Cells

• Satoshi Watauchi (University of Yamanashi, Japan)
  Feed size dependence of suitable mirror position for silicon crystal growth by infrared convergent heating floating zone method

Chair(s): Reinhard Uecker (IKZ Berlin, Germany)
Invited speakers:

• Xutang Tao (State Key Lab of Crystal Materials, Shandong University, China)
  Crystal growth and nonlinear optical properties of BaTeMo2O9

• Christian Kraenkel (University of Hamburg, Germany)
  Growth by the Heat Exchanger Method and Laser Operation of Rare-earth Doped Sesquioxides

• Ludmilla Isaenko (Russian Academy of Sciences, Novosibirsk, Russia)
  Growth and Properties of Novel Nonlinear Optical Crystals for the Mid-Infrared

• Joseph Kolis (Clemson University, USA)
  Hydrothermal Growth of Multifunctional Single Crystals as Solid State Laser Hosts

Poster:

• Derradji Bahloul (Université El-Hadj-Lakhdar de Batna, Algeria)
  The crystal growth process of titanium doped sapphire fibers by the micro-pulling down technique

• Omar Benamara (Claude Bernard University Lyon1, France)
  Bubbles defects observation during shaped sapphire crystal grown by the micro-pulling down techniques

• Aleksey Brykovskiy (Lomonosov Moscow University, Russia)
  Nonstoichiometry and defect formation in scheelite-like double tungstates grown by the Czochralsky technique

• Joseph Daniel (SSN College of Engineering, Kalavakkam, India)
  Growth and thermoluminescence studies on rare earth orthogallate (NdGaO₃) single crystal by Floating zone technique

• Jindřich Houžvička (CRYTUR, Czech Republic)
  Growth of very large, stress-free YAG crystals with a new method

• Liudmila Ivleva (A.M.Prokchorov General Physics Institute RAS, Russia)
  Investigation of Second Harmonic Generation in SBN Crystals

• Zhitai Jia (Shandong University, China)
  Growth of Nd:GGG crystals with the diameter up to 190 mm by Czochralski method

• Tetsuo Kudo (Tohoku University, Japan)
  Growth of Ca₃Ta(Ga_1-xAl_x)3Si₂O₁₄ piezoelectric single crystals by Czochralski method and their piezoelectric properties

• SP. Prabhakaran (Bharathidasan University, Tamil Nadu, India)
  Growth and optical studies of bulk 4-Aminobenzophenone single crystal by modified vertical dynamic gradient freeze technique

• Mitsuyoshi Sakairi (OXIDE Corporation, Japan)
  Czochralski growth of ferroelectric LaBGeO₅ single crystals for UV-generation

• Masahiro Sasaura (OXIDE Corporation, Japan)
  Single crystal growth of KTaxNb_1-xO₃ by the Bridgman method

• Ekaterina A. Simonova (Institute of Geology and Mineralogy SB RAS, Russia)
  Investigation of phase equilibria and growth of BBO (β-BaB₂O₄) crystals in BaB₂O₄–LiF system

• Abdallah Laidoune (Université El-Hadj-Lakhdar de Batna, Algeria)
  Optimization of the growth of titanium doped sapphire fibers by the micropulling down technique

Chair(s): Alexander Gektin (Institute for Single Crystals, Kharkov, Ukraine), Edith Bourret-Courchesne (Lawrence Berkeley National Laboratory, USA)
Invited speakers:

• Merry Koschan (University of Tennessee, Knoxville, USA)
  A retrospective on the development of lutetium oxyorthosilicate (LSO)

• Edith Bourret-Courchesne (Lawrence Berkeley National Laboratory, USA)
  Crystal Growth of Alkali Earth Halide Scintillators

• Akira Yoshikawa (Tohoku University, Japan)
  Material Design and Crystal Growth of High Performance Scintillators

• Jun Luo (TRS Technologies, USA)
  Recent Development on Piezoelectric Crystals for Transduction and Sensing Applications - Understanding and Overcoming the Technical Barriers to Commercialization

Poster:

• Sara Faraj (Claude Bernard University Lyon1, France
  Growth and characterization of cerium doped LuAG fibers grown by μ-Pulling down for medical imaging devices and scintillators

• Md Anwar Hossain (University of Yamanashi, Japan)
  Floating zone growth and characterization of SrFeO_3-d and CaFeO_3-d single crystals

• Kei Kamada (Tohoku University, Japan)
  Growth of N-benzyl-2-methyl-4-nitroaniline (BNA) single crystal fibers by micro pulling down method

• Jan Pejchal (Tohoku University, Japan)
  Crystal growth, scintillation and luminescence properties of Li₄SiO₄ single crystals for neutron detection

• Guohao Ren (Shanghai Institute of Ceramics CAS, China)
  Growth of bulk CsI(Tl) crystal and its light output uniformity

• Yasuhiro Shoji (C&A Corporation, Japan)
  Czochralski Growth of 2 inch (Gd_1-x-yLa_xCe_y)₂Si₂O₇ (Ce:La-GPS) single crystal and its scintillation properties

• P. Vijayakumar (SSN College of Engineering, Kalavakkam, India)
  Growth and characterization of AgGa_0.5In_0.5Se₂ single crystal by vertical Bridgman method for IR applications

• Jiayue Xu (Shanghai Institute of Technology, China)
  Bridgman growth and scintillation properties of rare-earth doped Bi₄Si₃O₁₂ crystals

• Akhiro Yamaji (Tohoku University, Japan)
  Crystal growth and luminescence properties of Cr:Gd₃Ga_5-xAl_xO₁₂ crystals for IR scintillator

• Yuui Yokota (Tohoku University, Japan)
  Growth and Scintillation Properties of 1 inch Eu:SrI₂ Bulk Crystals Grown by the Bridgeman Method Using High-Frequency Induction Heating

• Weiguo Zhang (Aalto University, USA)
  Large Size Single Crystal Growth, and Multifunctional Properties of Materials LiMP₂O₇ (M = Fe, Cr)

Chair(s): Matthias Bickermann (IKZ Berlin, Germany)
Invited speakers:

• Tania Paskova (North Carolina State University, USA)
  Status of HVPE Grown GaN and AlGaN Templates and Bulk Substrates

• Dirk Ehrentraut (Soraa, USA)
  SCoRA – New Technology for Scalable, High Rate Growth of Bulk Gallium Nitride

• Zbigniew Galazka (IKZ Berlin, Germany)
  Bulk Single Crystals of Transparent Semiconducting Oxides: Growth and Properties

• Zlatko Sitar (North Carolina State University, USA)
  AlN-based Technology: Crystal Growth, Epitaxy, and Devices.

• Noboru Ohtani (Kwansei Gakuin University, Japan)
  SiC epitaxial wafers for power device applications: present status and prospect

Poster:

• Seido Araki (Kyushu University, Japan)
  Unsteady thermodynamical analysis of the polytype stability in PVT growth of SiC using 2D nucleation theory

• Michal Fijalkowski (Institute of High Pressure Physisc PAS, Poland)
  Free-standing HVPE-GaN crystals obtained from ammonothermal GaN substrates as seeds for the HVPE growth

• Boleslaw Lucznik (Institute of High Pressure Physics PAS, Poland)
  HVPE-GaN growth on non-polar and semi-polar seeds

• Yun Ji Shin (INP Grenoble, France)
  The effect of rotation on the macro-steps formation during 4H-SiC solution growth

• Tomasz Sochacki (Institute of High Pressure Physics PAS, Poland)
  Examination of growth rate during Hydride Vapor Phase Epitaxy of GaN on ammonothermal GaN seeds

• Peng Su (Xi'an Jiaotong University, China)
  Combined computational fluid dynamics and quantum chemistry calculations for the gas phase nucleation of GaN

Chair(s): Michael Neubert (IKZ Berlin, Germany)
Invited speakers:

• Patrick Berwian (Fraunhofer IISB, Germany)
  Quality Assurance in the Epitaxy of SiC and its Relevance for Device Reliability

• Jan-Freerks Rieken (ppm Pure Metals, Germany)
  Origin and Supply Security of Minor Metals

• Benno Orschel (MEMC Electronic Materials, USA)
  Requirements for Model Predictive Control in Industrial Crystal Production by Czochralski Process

Poster:

• Jeffrey J. Derby (University of Minnesota, USA)
  A perspective on the history and future of Bridgman crystal growth

• Evgeny Galenin (Institute for Scintillation Materials NAS, Ukraine)
  Optimized Algoritms of Atomated Bulk Crystal Growth

• Fadila Haddad (Université Houari Boumediene, Algeria)
  Forced Convection Effect on Heat Exchanger Crystal Growth

• Robert Král (Institute of Physics AS CR, Czech Republic)
  Growth and luminescence properties of pure and RE-doped RbPb2Cl5 crystals prepared by vertical Bridgman method

• Abdelkrim Merah (Université de M'hamed Boumerdes, Algeria)
  Numerical Investigation of Hydrodynamic Stability in CZ Process

• Faiza Mokhtari (University Mouloud Mammeri de TiziOuzou, Algeria)
  Free Surface Study in Silicon Czochralski Melt

• Jeffrey Peterson (University of Minnesota, USA)
  A Comprehensive Model of the Growth of Cadmium Zinc Telluride (CZT) by the Traveling Heater Method (THM)

• Andrey Sadovskiy (D. Mendeleyev University of Chemical Technology, Russia)
  Verification of numerical model of AVC technique for crystal growth from melt

Chair(s): Albrecht Seidl (Schott, Germany)
Invited speakers:

• Irina Shikunova (Russian Academy of Sciences, Chernogolovka, Russia)
  Sapphire Shaped Crystals for Medicine

• Shinichi Shikata (Diamond Research Labs, AIST, Japan)
  Diamond Wafer Prospect for the Power Device Application

• Noah Smick (GT Advanced Technologies, USA)
  Using Proton-Induced Exfoliation to Manufacture Low-Cost, Device-Quality Single Crystal Substrates

• Sarah Kajari-Schröder (Institute for Solar Energy Research IFSH, Germany)
  Kerfless Wafering for Photovoltaics

Poster:

• Martin Klejch (CRYTUR, Czech Republic)
  Growth of sapphire capillaries for X-ray studies under supercritical conditions

Chair(s): Chung-Wen Lan (National Taiwan University, Taiwan)
Invited speakers:

• Andrea Ferrari (Cambridge University, Great Britain)
  Graphene Future Emerging Technology

• Lain Jong Li (Academia Sinica, Taiwan)
  Growth of Transition Metal Dichalcogenide Monolayers with Chemical Vapor Deposition

• Mikael Syväjärvi (Linköping University, Sweden)
  3C-SiC Thick Layer Growth with Cubic Sublimation Method

Poster:

• Hyunchul Jang (Yonsei University, Korea)
  Comparison of the influences of in-situ doping using B₂H₆ and PH₃ on polycrystalline Ge layers

• Byongju Kim (Yonsei University, Korea)
  Effect of phosphorus on epitaxial growth of Ge layers on Si(111) substrates

• Lu Shi (INP Grenoble, France)
  High temperature solution growth and characterization of V₂AlC single crystals

• Amina Tandjaoui (CNRS-SIMAP, EPM, France)
  Characterization of Liquid Oxide by Sessile Drop Method on Refractory Substrates